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Semiconductor Lithography Equipment
FPA-6300ESW
Wide-Field / High Productivity KrF Scanner

  • Features
  • Specifications

Basic Information

Model Name: FPA-6300ESW

Features

FPA-6300ESW scanners are equipped with a Wide-Field Lens

By changing the projection lens magnification (4:1 → 3.125:1), FPA-6300ESW scanners realize a wider exposure field with the reticle size remaining at 6 inches.
The FPA-6300ESW is the only KrF scanner in the world that can expose a full size CMOS image sensor without *stitching because 33 mm x 42.2 mm can be exposed in one shot.

  • *Stitching exposure: A method of increasing exposure field size by connecting two or more adjacent exposure regions. The positional accuracy and alignment of the adjacent exposure regions directly affects the yield.

FPA-6300ESW scanners are derived from the proven FPA-6300ES6a Platform

FPA-6300ESW scanners adopt technology developed to support Front-End-Of-the-line (FEOL) semiconductor manufacturing processes and are able to provide the similar utilization and reliability as FPA-6300ES6a scanners.
FPA-6300ESW scanners also feature an extendable platform allowing field upgrades for improving productivity and overlay accuracy.

Specifications

Resolution
≦ 130 nm
NA (Numerical Aperture)
0.45~0.70 (Variable)
Reduction Ratio
1:3.125
Field Size
33 mm x 42.2 mm
Exposure Wavelength
KrF 248 nm
Reticle Size
6 inch
Wafer Size
300 mm (12 inch)
Overlay Accuracy
≦9nm
Main Body Dimensions
(W) 2,300 x (D) 5,155 x (H) 2,900 mm
Major Options
AFIS Illumination System
SMIF OHT Kit
PC Remote Console
Online Function (GEM2)
Pellicle Particle Checker