Semiconductor Lithography EquipmentFPA-6300ESWWide-Field / High Productivity KrF Scanner
- Features
- Specifications
Basic Information
Model Name: FPA-6300ESW
Features
FPA-6300ESW scanners are equipped with a Wide-Field Lens
By changing the projection lens magnification (4:1 → 3.125:1), FPA-6300ESW scanners realize a wider exposure field with the reticle size remaining at 6 inches.
The FPA-6300ESW is the only KrF scanner in the world that can expose a full size CMOS image sensor without *stitching because 33 mm x 42.2 mm can be exposed in one shot.
- *Stitching exposure: A method of increasing exposure field size by connecting two or more adjacent exposure regions. The positional accuracy and alignment of the adjacent exposure regions directly affects the yield.
FPA-6300ESW scanners are derived from the proven FPA-6300ES6a Platform
FPA-6300ESW scanners adopt technology developed to support Front-End-Of-the-line (FEOL) semiconductor manufacturing processes and are able to provide the similar utilization and reliability as FPA-6300ES6a scanners.
FPA-6300ESW scanners also feature an extendable platform allowing field upgrades for improving productivity and overlay accuracy.
Specifications
- Resolution
- ≦ 130 nm
- NA (Numerical Aperture)
- 0.45~0.70 (Variable)
- Reduction Ratio
- 1:3.125
- Field Size
- 33 mm x 42.2 mm
- Exposure Wavelength
- KrF 248 nm
- Reticle Size
- 6 inch
- Wafer Size
- 300 mm (12 inch)
- Overlay Accuracy
- ≦9nm
- Main Body Dimensions
- (W) 2,300 x (D) 5,155 x (H) 2,900 mm
- Major Options
- AFIS Illumination System
SMIF OHT Kit
PC Remote Console
GEM-compliant online software
Pellicle Particle Checker