Semiconductor Lithography Equipment


Wide-Field / High Productivity KrF Scanner

  • Features
  • Specifications

Basic Information

Model Name: FPA-6300ESW


FPA-6300ESW scanners are equipped with a Wide-Field Lens

By changing the projection lens magnification (4:1 → 3.125:1), FPA-6300ESW scanners realize a wider exposure field with the reticle size remaining at 6 inches.
The FPA-6300ESW is the only KrF scanner in the world that can expose a full size CMOS image sensor without *stitching because 33 mm x 42.2 mm can be exposed in one shot.

  • * Stitching exposure: A method of increasing exposure field size by connecting two or more adjacent exposure regions. The positional accuracy and alignment of the adjacent exposure regions directly affects the yield.

FPA-6300ESW scanners are derived from the proven FPA-6300ES6a Platform

FPA-6300ESW scanners adopt technology developed to support Front-End-Of-the-line (FEOL) semiconductor manufacturing processes and are able to provide the similar utilization and reliability as FPA-6300ES6a scanners.
FPA-6300ESW scanners also feature an extendable platform allowing field upgrades for improving productivity and overlay accuracy.


Resolution ≦ 130 nm
NA (Numerical Aperture) 0.45~0.70 (Variable)
Reduction Ratio 1:3.125
Field Size 33 mm x 42.2 mm
Exposure Wavelength KrF 248 nm
Reticle Size 6 inch
Wafer Size 300 mm (12 inch)
Overlay Accuracy ≦9nm
Main Body Dimensions (W) 2,300 x (D) 5,155 x (H) 2,900 mm
Major Options AFIS Illumination System
PC Remote Console
GEM-compliant online software
Pellicle Particle Checker